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81.
Two-dimensional (2-D) state-space digital filters are investigated for stability with and without quantization. A sufficient condition is obtained for the stability of the linear Fornasini-Marchesini (1976) state-space model. The same model is then studied for stability when implemented using two's complement truncation quantization, and a sufficient condition for asymptotic stability of the nonlinear filter is obtained. In the process, a theorem is proved which gives a sufficient condition for the stability of a one-dimensional (1-D) state-space digital filter under the same type of quantization  相似文献   
82.
A polyhedron P is castable if its boundary can be partitioned by a plane into two polyhedral terrains. Castable polyhedra can be manufactured easily using two cast parts, where each cast part can be removed from the object without breaking the cast part or the object. If we assume that the cast parts are each removed by a single translation, it is shown that for a simple polyhedron with n vertices, castability can be decided in time and linear space using a simple algorithm. A more complicated algorithm solves the problem in time and space, for any fixed ε > 0. In the case where the cast parts are to be removed in opposite directions, a simple O(n 2 )-time algorithm is presented. Finally, if the object is a convex polyhedron and the cast parts are to be removed in opposite directions, a simple algorithm is presented. Received June 1, 1994; revised May 25, 1995.  相似文献   
83.
GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found. Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes atT>70 K. Weak localization was confirmed through observation of negative magnetoresistance. TheIV characteristics showed quantized behaviour due to tunneling across potential barriers, which may be due to stacking faults between layer planes as observed by TEM studies.  相似文献   
84.
Artificial intelligence (AI) tools, such as expert systems, fuzzy logic, and neural networks are expected to usher a new era in power electronics and motion control in the coming decades. Although these technologies have advanced significantly and have found wide applications, they have hardly touched the power electronics and machine drives area. The paper describes these AI tools and their application in the area of power electronics and motion control. The body of the paper is subdivided into three sections which describe, respectively, the principles and applications of expert systems, fuzzy logic, and neural networks. The theoretical portion of each topic is of direct relevance to the application of power electronics. The example applications in the paper are taken from the published literature  相似文献   
85.
A special class of complex biquad digital filters called orthogonal filters are investigated for stability under two's complement quantization. A sufficient condition is derived for the asymptotic stability of the nonlinear filter. Bounds on the possible limit cycles are also obtained. Using these bounds, any given filter can be tested for stability. The stability triangle is then scanned using a dense grid, and each point on the grid is tested for stability/limit cycles. By this method, the stability region given by the sufficient condition is extended. Regions within the linear stability triangle where various types of limit cycles are possible are also identified.  相似文献   
86.
Thermal and electrical destruction of 55 V single and double reduced surface field (RESURF) lateral double-diffused MOSFETs (LDMOSFETs) in smart power ICs are investigated by experiments, simulations, and theoretical modeling. Static safe operating area (SOA) and single pulse dynamic SOA (energy capability) have been studied and correlated. Single RESURF device failure and hence the energy capability is controlled by electrical phenomenon for drain to source voltage near breakdown voltages, whereas the energy capability of the double RESURF device is shown to be controlled by thermal phenomenon for voltage ranges up to about 5 V below the breakdown voltage. Measured energy capability data have been used to obtain critical temperatures for device failure, which decreases with an increase in drain to source voltage. We have empirically shown using experimental data that if the dynamic SOA of the device comes within about 2-5× of the static SOA boundary, the device failure is strongly influenced by avalanche multiplication. An analytical model based on Green's function formulation is derived and proposed which can predict energy capability of LDMOSFETs for a wide range of device geometry. The calculated data show excellent matching with the measurements and are within ±10%. A new technique of distributing power within a device by applying less power at the center and more at the edges is proposed, which realizes significant improvement in energy capability by optimizing the temperature distribution within the device  相似文献   
87.
Corrugation formation is investigated in bearing components in squirrelcage induction motors. The study, conducted on site, measured shaft voltage and analysed motor bearing vibrations from 48 motors on nine sites. The on-site frequency data was compared with the measured natural frequency of the motors. Detailed profilometric, optical and SEM studies were carried out on the surface of failed bearings to aid discussion on the formation of corrugations in bearings used in squirrelcage induction motors.  相似文献   
88.
Flexural properties, impact energy, heat deflection temperature, and resistance to thermal and hydrothermal degradation of composites based on E-glass and N-glass fibers as the reinforcing agents, and epoxy, unsaturated polyester, phenolic, and epoxy-phenolic resin systems as the matrix materials were studied and compared. As a reinforcing agent E-glass fiber is superior to N-glass fiber, particularly with respect to development of flexural strength and modulus, impact strength, and thermal resistance; N-glass fiber, however, imparts to the composites substantially higher resistance to hydrothermal degradation under boiling conditions in different chemical environments. For use of both E-glass and N-glass fibers as reinforcing agents, the general order of resistance to hydrothermal degradation for the composites based on different matrix resins is epoxy > phenolic > unsaturated polyester resin. Incorporation of a low dose of a rubbery polymer, such as styrene butadiene rubber (0.1–0.2%) and liquid polybutadiene (0.5–0.75%), in unsaturated polyester resin as the matrix resin measurably enhances impact energy of the composite. © 1995 John Wiley & Sons, Inc.  相似文献   
89.
S.C. Ray  C.W. Pao  B. Bose  W.F. Pong 《Carbon》2006,44(10):1982-1985
Annealing effect of amorphous carbon thin films on Si(1 0 0) substrates is studied by normal incidence and angle dependent carbon K-edge X-ray absorption near-edge structure (XANES) spectroscopy. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface when the film is annealed at 1000 °C. Micro-Raman spectroscopy reveals two well-separated bands the D band at 1355 cm−1 and G band at ∼1600 cm−1, and their ID/IG intensity ratio indicates the formation of more graphitic film at higher annealing temperatures. X-ray diffraction pattern of 1000 °C temperature annealed film confirms the formation of graphite structure.  相似文献   
90.
Oxidation kinetics of copper in the temperature range of 973–1173 K atP O 2=21.27 kPa exhibit enhancement and deceleration in the rates with changing polarity compared to normal oxidation under interrupted mode of directcurrent application. These conditions are achieved by connecting the oxidizing copper covered with an initially formed thin oxide film to the positive and negative terminal of a dc source, respectively. However, the influence of direction of the current is found to be opposite under uninterrupted mode of impressed current flow in the same temperature range. The effect of short-circuiting the metal to the outer oxide/air interface on the reaction kinetics is also reported. The rate of oxide-scale growth under normal condition, and two different modes of current applications as well as with shorting circuitry attachment conform to the parabolic growth law. The results pertaining to the two different modes of impressed current have been discussed considering both the phenomena of electrolysis of the oxide electrolyte and the polarization at the two phase boundaries. The enhancement and the reduction in rates under uninterrupted impressed current conditions are explained on the basis of increased and decreased average defect concentrations, respectively, within the oxide layer. The acceleration and deceleration in the rates under interrupted mode of current flow have been explained in the light of sustenance of a steeper and flatter electrochemical-potential gradient of defects, respectively, across the growing-oxide layer. The possible different responses of the metal/oxide and oxide/air interfaces to the impressed current brought into play by two different modes of current application, have enabled to display a better insight on the mechanistic aspects of scale growth under the influence of an externally applied current.  相似文献   
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